发明名称 CMOS CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a CMOS circuit and a semiconductor device which have a small leak current even when a threshold voltage V<SB POS="POST">T</SB>is small and which operate at a high speed with a small voltage amplitude. <P>SOLUTION: An output stage circuit includes an MOST(M) in which a sub-threshold current flows substantially between a drain and a source when the voltage of the gate is made equal to that of the source. In the output stage circuit, a voltage is applied to the gate of the MOST(M) to reversely bias between the gate and the source of the MOST(M) when the output stage circuit is inactive. That is, a higher voltage is applied to the gate compared with a p-type source when the MOST(M) is a p-channel type, and a lower voltage is applied to the gate compared with an n-type source when the MOST(M) is an n-channel type. When the output stage circuit is active, the reverse bias state is hold or the state is controlled to be a forward bias state according to an input voltage. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012050105(A) 申请公布日期 2012.03.08
申请号 JP20110210278 申请日期 2011.09.27
申请人 RENESAS ELECTRONICS CORP 发明人 ITO KIYOO;YAMAOKA MASANAO
分类号 H03K19/0948;H01L21/8238;H01L27/092;H03K17/06;H03K17/687;H03K19/0175;H03K19/096 主分类号 H03K19/0948
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