发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of operating at a threshold value at which a conventional semiconductor device would not operate. <P>SOLUTION: A semiconductor device includes first to third N-type transistors, first to third P-type transistors, an analog switch, and capacitor means. One of the capacitor means is electrically connected to the analog switch, the other of a source or a drain of the third N-type transistor, and the other of a source or a drain of the third P-type transistor. The capacitance of the capacitor means is larger than the capacitance generated in the first P-type transistor and the first N-type transistor. The analog switch receives a first latch signal, a second latch signal, and a data signal. The first latch signal is input to a gate of the second P-type transistor and a gate of the third N-type transistor. The second latch signal is input to a gate of the second N-type transistor and a gate of the third P-type transistor. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012050147(A) 申请公布日期 2012.03.08
申请号 JP20110267651 申请日期 2011.12.07
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 OSAME MITSUAKI
分类号 H03K3/356;G09G3/30;G09G3/36;H03K19/096 主分类号 H03K3/356
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