| 发明名称 |
RESIST FILM REMOVAL METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist film removal method having more reliable processing performance than ever with a reduced lead time. <P>SOLUTION: The resist film removal method attached on a processing surface of a workpiece includes: dry processing the resist film attached on the processing surface of the workpiece by supplying active hydrogen atom generated by an inductively coupled plasma method between atmospheric pressure and 100 Pa; and dry processing by supplying active oxygen atom generated by the inductively coupled plasma method between atmospheric pressure and 100 Pa and/or wet processing by medical liquid. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012049560(A) |
申请公布日期 |
2012.03.08 |
| 申请号 |
JP20110237273 |
申请日期 |
2011.10.28 |
| 申请人 |
RIVERBELL KK;TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
KANEGAE MASAMI;OKINO AKITOSHI;MIYAHARA SHUICHI |
| 分类号 |
H01L21/3065;G03F7/42;H01L21/304 |
主分类号 |
H01L21/3065 |
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