| 摘要 |
The invention relates to a magnetic device comprising a reference layer (2), the magnetization direction of which is fixed, and a storage layer, (3), the magnetization direction of which is variable. In a write mode, the magnetization direction of the storage layer (3) is changed so as to store a "1" or a "0" in said storage layer. In a reading mode, the resistance of the magnetic device is measured so as to know what is stored in the storage layer (3). The magnetic device is particularly characterized in that it also comprises a control layer (4), the magnetization direction of which is variable. The magnetization direction of the control layer (4) is controlled so as to increase the effectiveness of the spin-transfer torque in the event writing to the storage layer (3) is desired, and to decrease the effectiveness of the spin-transfer torque in the event reading the information contained in the storage layer (3), without modifying said information, is desired. |
