发明名称 NONVOLATILE MEMORY DEVICE
摘要 PURPOSE: A nonvolatile memory device is provided to reduce an area of a memory by arranging a row data buffer array near a DQ pad. CONSTITUTION: A nonvolatile memory device includes a bank and a data input/output unit(700). The bank outputs sensed data with a plurality of unit cells into a global input/output line(GIO). The same data as the data stored in the unit call of the bank is stored in a register. A data input/output unit stores data applied from the outside in the register in a write operation and outputs the data stored in the register to the outside in a read operation. The register includes a row data buffer.
申请公布号 KR20120020412(A) 申请公布日期 2012.03.08
申请号 KR20100084016 申请日期 2010.08.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YON, SUN HYUCK
分类号 G11C13/02;G11C16/06;G11C16/10;G11C16/26 主分类号 G11C13/02
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