| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the 3 dB frequency bandwidth without thinning the thickness of an electron-transmitting layer and a light absorption layer. <P>SOLUTION: A photodiode comprises: an n-type contact layer (a first semiconductor layer) 102 composed of an n-type semiconductor, formed on a substrate 101; an electron-transmitting layer 103 composed of a semiconductor, formed over the substrate 101; a light absorption layer 104 composed of a semiconductor, formed over the substrate 101; a p-type contact layer (a second semiconductor layer) 105 composed of a p-type semiconductor, formed over the substrate 101; first electrodes 106 formed on the n-type contact layer 102; and a second electrode 107 formed on the p-type contact layer 105. The conduction band edge of the p-type contact layer 105 has a higher energy state than that of the light absorption layer 104. The valence band edge of the p-type contact layer 105 has a high energy state than that of the light absorption layer 104. <P>COPYRIGHT: (C)2012,JPO&INPIT |
