| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem of conventional plasma processing that gas flow distribution and reaction product flow distribution in the processing chamber cannot be controlled according to change in plasma conditions, controllable ranges of gas flow distribution and reaction product flow distribution are narrow, and gas flow distribution and reaction product flow distribution cannot be changed with high accuracy between steps in step etching. <P>SOLUTION: A first etching gas supply means and a second etching gas supply means are provided and the etching gas supply means are adjusted respectively. The second etching gas supply means is installed on the periphery of a wafer, and etching gas flow and reaction product flow in the processing chamber are controlled. <P>COPYRIGHT: (C)2012,JPO&INPIT |
