| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure whose number of writing times is not limited and which is capable of holding memory content even under no power supply circumstances, achieve higher integration of semiconductor devices, and increase the memory capacity per unit area. <P>SOLUTION: A semiconductor device is formed using a material that can sufficiently reduce the off current of a transistor, for example, an oxide semiconductor material. Transistors each including an oxide semiconductor material for each memory cell of a semiconductor device are serially connected to each other. Wiring electrically connected to one terminal of a capacitive element of a j-th (j is a natural number of 2 or more and m or less) memory cell and wiring electrically connected to a gate terminal of a transistor in which a channel of a (j-1)-th memory cell is formed in an oxide semiconductor layer are the same wiring (j-th word line). Accordingly, the number of wiring per memory cell is reduced and the occupied area for each memory cell is reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
