| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a heterojunction field effect transistor that suppresses current collapse and reduces gate leakage current. <P>SOLUTION: The manufacturing method of a heterojunction field effect transistor comprises: (a) a step of preparing a nitride semiconductor layer having a laminate on which a channel layer 30, a barrier layer 40, and a cap layer 50 are laminated in this order; (b) a step of forming a cap film 110 which does not include Si on the nitride semiconductor layer; (c) a step of forming an impurity region 60 by selectively implanting an impurity into the nitride semiconductor layer and activating the impurity by heat treatment after the step (b); (d) a step of removing the cap film 110 and forming a source electrode 80 and a drain electrode 90 on the impurity region 60 after the step (c); and (e) a step of forming a gate electrode 100 in the region where at least a part of the nitride semiconductor layer is removed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
