发明名称 |
EPITAXIAL SILICON WAFER AND PRODUCTION METHOD THEREOF |
摘要 |
Provided is an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is characterized in that the epitaxial layer is formed on a silicon wafer for epitaxial growth having a cross-sectional form satisfying a relation of a given expression. |
申请公布号 |
US2012056307(A1) |
申请公布日期 |
2012.03.08 |
申请号 |
US201113293843 |
申请日期 |
2011.11.10 |
申请人 |
KIHARA TAKAYUKI;TAKAISHI KAZUSHIGE;HASHIMOTO YASUYUKI;SUMCO CORPORATION |
发明人 |
KIHARA TAKAYUKI;TAKAISHI KAZUSHIGE;HASHIMOTO YASUYUKI |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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