| 摘要 |
<p>The purpose of the present invention is to provide a semiconductor device, which can rapidly and accurately detect information relating to the temperature of a semiconductor transistor integrated in the semiconductor device. An MOSFET (1) of the present invention is configured of a plurality of cells, and has a main cell group (2) that includes a cell for supplying a current to a load, said cell being among the cells, and a sense cell group (3) that includes a cell for detecting temperature information relating the temperature of the MOSFET (1), said cell being among the cells. The main cell group (2) and the sense cell group (3) have different temperature characteristics that indicate an electrical characteristic change due to a temperature change. A temperature detecting circuit (10) detects the temperature of the MOSFET (1) on the basis of, for instance, the value of a main current flowing in the main cell group (2), and the value of a sense current flowing in the sense cell group (3).</p> |
