METHOD FOR MANUFACTURING BONDED WAFER

摘要

Disclosed is a method for performing peeling without generating breakage of a substrate in the case where the thermal expansion coefficient of a handle substrate is higher than that of a donor substrate. A method for manufacturing a bonded wafer at least includes: a step of forming an ion-implanted interface (5) by implanting ions from the surface of a donor substrate (3); a step of making a bonded substrate by bonding a handle substrate (7), which has a thermal expansion coefficient higher than that of the donor substrate (3), on the donor substrate (3) surface having the ions implanted therein; a step of obtaining a bonded body (1) by performing heat treatment to the bonded substrate; a peeling step wherein the bonded body (1) is cooled to a temperature below the room temperature by means of a cooling apparatus (20), the donor substrate (3) of the bonded body (1) is peeled from the ion-implanted interface, and a donor thin film is transferred onto the handle substrate (7).