| 发明名称 |
Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method |
| 摘要 |
A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba 1 - X Sr x Ti y 0 3 (wherein 0.2<x<0.6 and 0.9<y<l.l), the liquid composition is an organic metal compound solution in which a raw material for composing the composite metal oxide A and a raw material for composing the composite oxide B are dissolved in an organic solvent at a proportion having a metal atom ratio expressed by the formula shown above and a molar ratio between A and B in the range of 0.02<B/A<0.15. |
| 申请公布号 |
EP2426684(A1) |
申请公布日期 |
2012.03.07 |
| 申请号 |
EP20100305942 |
申请日期 |
2010.09.02 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
GUEGAN, GUILLAUME;WATANABE, TOSHIAKI;SOYAME, NOBUYUKI;SAKURAI, HIDEAKI |
| 分类号 |
H01G7/06;C04B35/47;H01L21/02 |
主分类号 |
H01G7/06 |
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