| 摘要 |
<p>There is disclosed a thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, wherein the composition comprises at least:(A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent. There can be provided a thermosetting silicon-containing film-forming composition, wherein, in a multi-layer resist process used in lithography, the composition is capable of forming an excellent pattern with suppressed reflection even under a high NA exposure condition upon formation of a resist pattern subsequently after formation of a photoresist film onto a silicon-containing film formed on an organic film, capable of forming a silicon-containing film usable as an excellent dry etching mask between the photoresist film that is an upperlayer film of the silicon-containing film and the organic film that is an underlayer film thereof, and excellent in etching selectivity to the upperlayer photoresist.</p> |
