| 摘要 |
PURPOSE: A semiconductor memory apparatus is provided to secure enough margin between data of a global input/output line and a writing driver enabling signal when PVT(Process,Voltage,Temperature) are changed. CONSTITUTION: An enabling signal generation part generates a writing driver enabling signal which is enabled for a fixed section by receiving a reading/writing control signal and an input/output control signal. A delayed path selection part generates a delayed writing driver enabling signal(BWEND) by delaying the received writing driver enabling signal for a delay section which is set by a test mode signal. A writing driver(2) outputs data of a global input/output line to a local input/output line in response to the delayed writing driver enabling signal. |
