发明名称 |
Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates |
摘要 |
<p>A method includes forming a first epitaxial layer over a semiconductor substrate and etching the first epitaxial layer to form multiple separated first epitaxial regions. The method also includes forming a second epitaxial layer over the etched first epitaxial layer. Each epitaxial layer includes at least one Group III-nitride, and the epitaxial layers collectively form a buffer. The method further includes forming a device layer over the buffer and fabricating a semiconductor device using the device layer. The second epitaxial layer could include second epitaxial regions substantially only on the first epitaxial regions. The second epitaxial layer could also cover the first epitaxial regions and the substrate, and the second epitaxial layer may or may not be etched. The device layer could be formed during the same operation used to form the second epitaxial layer.</p> |
申请公布号 |
EP2426699(A1) |
申请公布日期 |
2012.03.07 |
申请号 |
EP20110178555 |
申请日期 |
2011.08.24 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BAHL, SANDEEP R.;RAMDANI, JAMAL |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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