发明名称 BIT LINE SENSE AMPLIFIER AND CONTROL METHOD THEREOF
摘要 PURPOSE: A bit line sensing amplifier and a control method thereof are provided to connect two bit lines existing on two different cell matrices, thereby reducing coupling noise generated from a reduction of a bit line interval due to high integration. CONSTITUTION: A plurality of cell matrices(CM1-CM3) respectively comprises a plurality of memory cells. A bit line sensing amplification part is comprised of a plurality of sensing amplifiers(BLSA) which amplifies electric potential of a bit line connected to the memory cell. The bit line sensing amplifier amplifies the electric potential of the bit line placed on the nonadjacent cell matrix which is connected to the bit line placed on the adjacent cell matrix through a metal line. The bit line and the bit line sensing amplifiers are connected to each other through a first switch. The bit line is connected to a bit line pre-charge voltage terminal through a second switch.
申请公布号 KR20120019910(A) 申请公布日期 2012.03.07
申请号 KR20100083499 申请日期 2010.08.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, DONG HWEE
分类号 G11C7/12;G11C5/14;G11C7/06 主分类号 G11C7/12
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