发明名称 Method and apparatus for application of wax on wafers.
摘要 <p>A method and an apparatus for applying molten wax to one face of a wafer(W) is disclosed. A container(11) having an upwardly facing opening contains the molten wax. The wafer (W) is held substantially horizontally above the opening of the container (11), with one face of the wafer (W) facing downwardly toward the opening of the container (11). At least one of the container (11) and the wafer (W) is moved toward the other to bring the opening of the container (11) and underside of the wafer (W) into contact with each other to thereby apply a predetermined amount of molten wax within the container (11) to the underside of the wafer (W). Preferably, the container (11) is filled with the molten wax such that the molten wax stands up, under surface tension, above a peripheral edge of the opening of the Container (11). Preferably, the wafer (W) is spinned around its central axis in a high speed so that the molten wax applied at the central portion thereof is spread on the entire surface of the wafer (W) and that the extra wax is scattered off the wafer. Preferably, walls surrounding the spinning wafer (W) are heated at a temperature higher than the melting point of the wax so that the wax spinned off the wafer may not scatter in the air as particles.</p>
申请公布号 EP0264957(A2) 申请公布日期 1988.04.27
申请号 EP19870115599 申请日期 1987.10.23
申请人 MITSUBISHI MATERIALS CORPORATION;MITSUBISHI MATERIALS SILICON CORPORATION 发明人 ISHII, KEIICHI;TSUTSUMI, YUKIO;SAEKI, KAZUNORI;KOYAMA, MITSUJI
分类号 B24B37/34;H01L21/00;H01L21/302 主分类号 B24B37/34
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