发明名称 SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To enable a laser array to be manufactured with good reproducibility by providing dummy channels which do not become a semiconductor laser beam emitting section on both sides of the channels, thereby making uniform the thickness of each resonator and the characteristics of the laser beam emitted from each resonator. CONSTITUTION:On the principal surface of the substrate 2 of a semiconductor laser device 12, three channels 1 shaped in a reverse trapezoid is provided in parallel with each other, on both sides of which dummy channels 11 are provided. In the manufacture of the semiconductor laser device 12, a step easily develops in the parts of a lowermost clad 3 corresponding to the corners of each groove, but, since the distance between the respective grooves is several mum to several tens of mum, namely close to each other, a step develops only in the parts corresponding to the outer corners of dummy channels 8 and the surface of the clad layer 3 becomes a planar surface in the other channels 1 parts. As a result, the thickness of an active layer 4 corresponding to the three channels 1 parts dedicated to a laser array does not vary, becoming a homogeneous and uniform thickness. Therefore, the light emitting characteristics in each resonator 7 becomes uniform and stable.
申请公布号 JPS63107183(A) 申请公布日期 1988.05.12
申请号 JP19860251667 申请日期 1986.10.24
申请人 HITACHI LTD 发明人 UEJIMA KENICHI;AIKI KUNIO
分类号 H01S5/00;H01S5/40 主分类号 H01S5/00
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