| 摘要 |
<p>There is provided a method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer (12) on a silicon substrate (11); forming photoelectric conversion portions (21), transfer gates (23), and a peripheral circuit portion in and/or on the silicon epitaxial growth layer (12) and further forming a wiring layer (31) on the silicon epitaxial growth layer (12); forming a split layer (13) in the silicon substrate (11) at a side of the silicon epitaxial growth layer (12); forming a support substrate (14) on the wiring layer (31); peeling the silicon substrate (11) from the split layer (13) so as to leave a silicon layer (15) formed of a part of the silicon substrate (11) at a side of the support substrate (14); and planarizing the surface of the silicon layer (15).</p> |
