| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent degradation of light emitting efficiency and deterioration of reliability when a semiconductor light emitting element is further formed on a continuous film semiconductor layer formed so as to differ in the substrate, lattice constant, or thermal expansion coefficient, using a partial growth suppressing structure. <P>SOLUTION: This semiconductor light emitting element has a sapphire substrate, a growth suppressing structure formed on the sapphire substrate, a GaN continuous film semiconductor layer formed on the sapphire substrate and the growth suppressing structure, and an active layer which generates light formed on the GaN continuous film semiconductor layer, wherein the growth suppressing structure consists of either a groove structure or a concavo-convex structure formed in the sapphire substrate, and a surface of the GaN continuous film semiconductor layer is flat. <P>COPYRIGHT: (C)2009,JPO&INPIT |
