| 摘要 |
PURPOSE:To obtain high-speed operation and a fine wiring structure by using a photoresist pattern in which an aluminum wiring occupation area is made to be substantially of a specific value of the whole wafer area for etching an aluminum film. CONSTITUTION:After forming a silicon nitride film 2, which is an insulating film, on a silicon substrate 1, while being covered with an aluminum 31, a pattern of a photoresist 4 is formed. Next, aluminum 31 is given dry etching having a photoresist 4 as a mask and later, the photoresist is removed to finish wiring formation. Then, aluminum 32 necessary for wiring formation, aluminum 33 on a scribe line and aluminum 34 on a semiconductor chip of a wafer peripheral part remain without being etching so as to make these aluminum occupation areas substantially more than 40% of the whole wafer area. Thereby, taper off of a wiring does not generate even when the foundation is of a silicon nitride film so as to obtain good wiring.
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