| 摘要 |
PURPOSE:To prevent generation of foaming and swelling at the time of heating or the like such as in case of reflow even when concentration of arsenic in arsenic glass is raised, by forming an arsenic glass film on CVD-SiO2. CONSTITUTION:A polysilicon electrode 4 is formed on a silicon substrate 3, and thereon, an arsenic glass film 1 (example: an AsSG film) is formed as a reflow film. That is, CVD-AsSG 2 (1000Angstrom ) is made to grow after growing silicon nitride (Si3N4) and in advance of growing CVD-AsSG 1 (6000Angstrom ). Later, heat treatment is performed in an N2 atmosphere of 950 deg.C. In this case, foaming and swelling of AsSG in not at all caused even when As concentration is raised in AsSG. Accordingly, a flow form can be improved, smoothening can be attained while enabling reflow at a low temperature.
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