MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor light emitting device is provided to improve the crystallinity of a transparent conductive oxide layer or metal layer by minimizing thermal damage to a light emitting structure. CONSTITUTION: A first conductive semiconductor layer(101) is formed on a substrate(100). A second conductive semiconductor layer(103) is formed on the first conductive semiconductor layer. A conductive layer(104) is formed on the second conductive semiconductor layer. The conductive layer is made of transparent conductive oxide. An annealing device(200) irradiates laser to the conductive layer.