发明名称 |
Chemical mechanical polish process control for improvement in within-wafer thickness uniformity |
摘要 |
A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile. |
申请公布号 |
US8129279(B2) |
申请公布日期 |
2012.03.06 |
申请号 |
US20080250239 |
申请日期 |
2008.10.13 |
申请人 |
LEE SHEN-NAN;LIN YING-MEI;CHENG YU-JEN;HUI KEUNG;LIN HUAN-JUST;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE SHEN-NAN;LIN YING-MEI;CHENG YU-JEN;HUI KEUNG;LIN HUAN-JUST |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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