发明名称 |
Method for manufacturing semiconductor device, including multiple heat treatment |
摘要 |
A semiconductor device manufacturing method having forming first and second insulating gate portions spaced from each other on a semiconductor substrate, selectively implanting the first conductivity type impurity ions to the first gate electrode and a surface layer of the semiconductor substrate adjacent to the first insulating gate portion, selectively implanting the second conductivity type impurity ions to the second gate electrode and the surface layer adjacent to the second insulating gate portion, after implanting the first and second conductivity types impurity ions, pre-annealing at a first substrate temperature, and after the pre-annealing, main-activating for the first and second types impurity ions at a second substrate temperature higher than the first substrate temperature for a treatment period shorter than a period of the pre-annealing. |
申请公布号 |
USRE43229(E1) |
申请公布日期 |
2012.03.06 |
申请号 |
US20080081248 |
申请日期 |
2008.04.11 |
申请人 |
ITO TAKAYUKI;SUGURO KYOICHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITO TAKAYUKI;SUGURO KYOICHI |
分类号 |
H01L21/8238;H01L27/092;H01L21/265;H01L21/336;H01L21/8234;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|