FABRICATING METHOD OF NON VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a nonvolatile memory device is provided to reduce the resistance of a word line by widely forming an area of a second metal silicide pattern. CONSTITUTION: A stack gate structure(10) including a lower structure(200) and a first poly silicon pattern is formed on a substrate. The lower structure includes a first dielectric film pattern(210), a charge storage film pattern(220), and a second dielectric film pattern(230). An insulation layer(130) covers the stack gate structure. A trench is formed on the insulation layer by partially removing the first poly silicon pattern. A metal film pattern is formed in the trench to be located on the first poly silicon pattern.