METHOD FOR FABRICATING CELL STRING AND NON-VOLATILE MEMORY DEVICE COMPRISING THE CELL STRING

摘要

PURPOSE: A cell string and a method for manufacturing a nonvolatile memory device including the same are provided to increase the integration of a memory device by adopting a vertical cell string structure. CONSTITUTION: A plurality of semiconductor patterns(100) are formed on a semiconductor substrate(10). A source area(110) is formed in a contact area between the semiconductor substrate and the semiconductor pattern. A common source area(200) is formed on the semiconductor substrate between the plurality of semiconductor patterns. First to sixth interlayer dielectric layers(20a-20f) and first to sixth conductive layers(40a-40f) on both sides of the semiconductor pattern. A selection transistor includes a string selection transistor and a ground selection transistor.