发明名称 METHOD FOR FABRICATING A CIS OR CIGS THIN FILM
摘要 PURPOSE: A method for manufacturing a uniform CIS or CIGS thin film is provided to obtain a thin film with various shapes and phases by easily controlling the composition of solutions, the density of impurities, reaction time, and temperature. CONSTITUTION: A first electrode layer(110) is formed on a substrate(100). A seed particle layer(120) including a copper indium compound seed particle is formed on the first electrode layer. Solutions(130) with water soluble precursors are spread on the seed particle layer. The solutions with the water soluble precursors include organic solvents and/or inorganic solvents. The spread solutions are changed into a thin film(140) at a high temperature.
申请公布号 KR20120018855(A) 申请公布日期 2012.03.06
申请号 KR20100081774 申请日期 2010.08.24
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 CHO, JUNG MIN;BAE, EUN JIN;SONG, KI BONG;SUH, JEONG DAE;CHUNG, MYUNG AE
分类号 H01L31/042;H01L31/0216 主分类号 H01L31/042
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