发明名称 |
Lateral power MOSFET with high breakdown voltage and low on-resistance |
摘要 |
A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region. |
申请公布号 |
US8129783(B2) |
申请公布日期 |
2012.03.06 |
申请号 |
US20080329285 |
申请日期 |
2008.12.05 |
申请人 |
HUANG TSUNG-YI;CHIANG PUO-YU;LIU RUEY-HSIN;HSU SHUN-LIANG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUANG TSUNG-YI;CHIANG PUO-YU;LIU RUEY-HSIN;HSU SHUN-LIANG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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