Integrated circuit with gate electrode level including at least six linear-shaped conductive structures forming gate electrodes of transisters with at least one pair of linear-shaped conductive structures having offset ends

摘要

A cell of a semiconductor device is disclosed to include a diffusion level including a plurality of diffusion regions separated by inactive regions. The cell also includes a gate electrode level including a number of conductive features defined to extend in only a first parallel direction. Each of the conductive features within the gate electrode level is fabricated from a respective originating rectangular-shaped layout feature. The gate electrode level includes conductive features defined along at least four different virtual lines of extent in the first parallel direction. The cell also includes a number of interconnect levels formed above the gate electrode level.