发明名称 |
Inducing strain in the channels of metal gate transistors |
摘要 |
In a metal gate replacement process, strain may be selectively induced in the channels of NMOS and PMOS transistors. For example, a material having a higher coefficient of thermal expansion than the substrate may be used to form the gate electrodes of PMOS transistors. A material with a lower coefficient of thermal expansion than that of the substrate may be used to form the gate electrodes of NMOS transistors. |
申请公布号 |
US8129795(B2) |
申请公布日期 |
2012.03.06 |
申请号 |
US201113013942 |
申请日期 |
2011.01.26 |
申请人 |
DATTA SUMAN;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW V.;BRASK JUSTIN K.;CHAU ROBERT S.;DOYLE BRIAN S.;INTEL CORPORATION |
发明人 |
DATTA SUMAN;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW V.;BRASK JUSTIN K.;CHAU ROBERT S.;DOYLE BRIAN S. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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