发明名称 |
Manufacturing method of microstructure |
摘要 |
A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate. |
申请公布号 |
US8129210(B2) |
申请公布日期 |
2012.03.06 |
申请号 |
US20100914939 |
申请日期 |
2010.10.28 |
申请人 |
KAWASHIMA TAKESHI;HOSHINO KATSUYUKI;KAWASHIMA SHOICHI;NAGATOMO YASUHIRO;CANON KABUSHIKI KAISHA |
发明人 |
KAWASHIMA TAKESHI;HOSHINO KATSUYUKI;KAWASHIMA SHOICHI;NAGATOMO YASUHIRO |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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