发明名称 |
Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor |
摘要 |
An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having improved electrical properties, in particular with regard to the use as an ESD protection element. |
申请公布号 |
US8129292(B2) |
申请公布日期 |
2012.03.06 |
申请号 |
US20100690776 |
申请日期 |
2010.01.20 |
申请人 |
GLASER ULRICH;GOSSNER HARALD;ESMARK KAI;INFINEON TECHNOLOGIES AG |
发明人 |
GLASER ULRICH;GOSSNER HARALD;ESMARK KAI |
分类号 |
H01L29/744;H01L29/74 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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