发明名称 Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor
摘要 An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having improved electrical properties, in particular with regard to the use as an ESD protection element.
申请公布号 US8129292(B2) 申请公布日期 2012.03.06
申请号 US20100690776 申请日期 2010.01.20
申请人 GLASER ULRICH;GOSSNER HARALD;ESMARK KAI;INFINEON TECHNOLOGIES AG 发明人 GLASER ULRICH;GOSSNER HARALD;ESMARK KAI
分类号 H01L29/744;H01L29/74 主分类号 H01L29/744
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