SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A semiconductor integrated circuit device is provided to improve driving performance of a transistor by forming an epitaxial layer. CONSTITUTION: A gate structure including a gate dielectric layer(110) and a gate electrode(120) is formed on a substrate(100). A first sidewall spacer(130) is formed on both sidewalls of the gate structure. A second sidewall spacer(140) is formed on the first sidewall spacer. A recess compensating layer(170) is formed between the second sidewall spacer and the substrate. An epitaxial layer(180) is contacted with the recess compensating layer.