发明名称 |
Nonvolatile ferroelectric memory device and method for manufacturing the same |
摘要 |
A nonvolatile ferroelectric memory device includes a plurality of unit cells. Each of the unit cells includes a cell capacitor and a cell transistor. The cell capacitor includes a storage node, a ferroelectric layer, and a plate line. The cell capacitors of more than one of the plurality of unit cells are provided in a trench. |
申请公布号 |
US8129200(B2) |
申请公布日期 |
2012.03.06 |
申请号 |
US20100905706 |
申请日期 |
2010.10.15 |
申请人 |
KANG HEE BOK;HYNIX SEMICONDUCTOR INC. |
发明人 |
KANG HEE BOK |
分类号 |
H01L21/00;H01L21/20;H01L21/8234;H01L21/8242 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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