| 摘要 |
A method of obtaining information related to a defect present in the irradiation of a substrate coated with a layer of radiation sensitive material using immersion lithography is disclosed. The method includes irradiating an area of the radiation sensitive material with a non-patterned radiation beam, the area being irradiated with a dose which is sufficient for the radiation sensitive material to be substantially removed during subsequent development of the radiation sensitive material if the radiation sensitive material is a positive radiation sensitive material, or with a dose which is sufficient for the radiation sensitive material to be substantially insoluble during subsequent development of the radiation sensitive material if the radiation sensitive material is a negative radiation sensitive material. The method further includes developing the radiation sensitive material and obtaining information at least indicative of the topography of radiation sensitive material remaining on the substrate after the radiation sensitive material has been developed in order to obtain information related to the defect. |
