发明名称 |
Reducing high-frequency signal loss in substrates |
摘要 |
An integrated circuit structure includes a semiconductor substrate of a first conductivity type; and a depletion region in the semiconductor substrate. A deep well region is substantially enclosed by the depletion region, wherein the deep well region is of a second conductivity type opposite the first conductivity type. The depletion region includes a first portion directly over the deep well region and a second portion directly under the deep well region. An integrated circuit device is directly over the depletion region. |
申请公布号 |
US8129817(B2) |
申请公布日期 |
2012.03.06 |
申请号 |
US20080347208 |
申请日期 |
2008.12.31 |
申请人 |
JOU CHEWN-PU;CHEN HO-HSIANG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
JOU CHEWN-PU;CHEN HO-HSIANG |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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