发明名称 |
GA-DOPED NANOWIRE GAS SENSOR AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A Ga-doped nano-wire gas sensor and a manufacturing method of the same are provided to be used for the various technical fields in which the gas sensing is necessary. CONSTITUTION: A Ga-doped nano-wire gas sensor comprises a substrate(101), an insulating layer(102), and a nano-wire(103) and a plurality of electrode. The insulating layer is formed in the top of the substrate. The nano-wire is located on surface the insulating layer. The gallium is doped in the nano-wire. A plurality of electrodes is electrically connected to the nano-wire.
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申请公布号 |
KR20120019126(A) |
申请公布日期 |
2012.03.06 |
申请号 |
KR20100082298 |
申请日期 |
2010.08.25 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
PARK, DONG HOON;LEE, SANG YEOL;LEE, DONG YUN;KIM, KYOUNG WON |
分类号 |
G01N27/12;B82B1/00;G01N27/407 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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