发明名称 GA-DOPED NANOWIRE GAS SENSOR AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A Ga-doped nano-wire gas sensor and a manufacturing method of the same are provided to be used for the various technical fields in which the gas sensing is necessary. CONSTITUTION: A Ga-doped nano-wire gas sensor comprises a substrate(101), an insulating layer(102), and a nano-wire(103) and a plurality of electrode. The insulating layer is formed in the top of the substrate. The nano-wire is located on surface the insulating layer. The gallium is doped in the nano-wire. A plurality of electrodes is electrically connected to the nano-wire.
申请公布号 KR20120019126(A) 申请公布日期 2012.03.06
申请号 KR20100082298 申请日期 2010.08.25
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 PARK, DONG HOON;LEE, SANG YEOL;LEE, DONG YUN;KIM, KYOUNG WON
分类号 G01N27/12;B82B1/00;G01N27/407 主分类号 G01N27/12
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