THE GROWTH METHOD OF GAN ON SI BY MODULATING THE SOURCE FLUX

摘要

PURPOSE: A growth method of GaN on an SI by modulating a source flux are provided to grow a second GaN layer without a crack by inserting an AlGaN layer between an AlN buffer layer and a first GaN layer as a buffer layer. CONSTITUTION: A metal N compound of an N saturation is deposited in a substrate to form a first metal N compound layer. The metal N compound is deposited in the first metal N compound layer to form a second metal N compound layer. A GaN of N saturation is deposited on a second metal N compound layer to form a first GaN layer. A GaN of Ga saturation is deposited in the first GaN layer to form a second GaN layer.