发明名称 BIAS-T APPARATUS WITH HIGH CAPACITANCE
摘要 PURPOSE: A bias-T apparatus having high capacitance is provided to maximize the surface of conductors and to increase capacitance. CONSTITUTION: A second conductor(130) includes a second outer connection unit and a second internal connection unit. One side of the second outer connection unit is opened. The second conductor is interconnected with a first conductor. A dielectric(140) is formed between the first and the second conductors.
申请公布号 KR101115324(B1) 申请公布日期 2012.03.06
申请号 KR20110067902 申请日期 2011.07.08
申请人 INNERTRON, INC. 发明人 HEO, KWANG MYOUNG
分类号 H04B7/14;H03H7/00 主分类号 H04B7/14
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