Selective emitter integrated photovoltaic cell, has metallization comprising electric contacts secured to overdoped areas and metal tracks arranged on N-doped silicon layer, where tracks connect contacts according to pattern of structure

摘要

The cell (30) has an N-doped silicon layer (34) covering a P-doped silicon layer to form a PN junction. Electric contact structure collects photocurrent in the junction and forms a pattern on the former semi conductor layer. The structure has overdoped areas (36) in the N-doped silicon layer forming discontinuous areas of pattern. The structure has metallization (38) comprising electric contacts (40) secured to the areas and metal tracks (42) arranged on the N-doped silicon layer. The metal tracks connect the electric contacts according to the pattern of the structure. An independent claim is also included for a method for manufacturing a selective emitter integrated photovoltaic cell.