发明名称 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element capable of being manufactured in a simple process and having a structure that reduces the optical waveguide loss in a curved optical waveguide. <P>SOLUTION: A nitride semiconductor light-emitting element comprises: a substrate 101 having a step 101b; and a stacked structure that is stacked on the substrate and has an n-type cladding layer 102, an active layer 104, and a p-type cladding layer 107. The stacked structure has an optical waveguide portion 10 including a curved optical waveguide 11. The outer region of the curve of the curved optical waveguide 11, which is located adjacent to the curved optical waveguide 11, is formed above the step 101b. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012043984(A) 申请公布日期 2012.03.01
申请号 JP20100183975 申请日期 2010.08.19
申请人 PANASONIC CORP 发明人 KASUGAI HIDENORI;ONO HIROSHI
分类号 H01L33/02;H01L21/205 主分类号 H01L33/02
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