| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus capable of performing stable plasma treatment on a large substrate, and also capable of increasing the production volume of plasma-treated substrates. <P>SOLUTION: A vacuum processing apparatus comprises: a discharge chamber 2 made up of a ridge waveguide having ridge electrodes 21a and 21b which are arranged in parallel to and opposed to each other and generate plasma therebetween; a pair of converters 3A and 3B which are adjacently arranged on both sides in the lengthwise direction of the discharge chamber 2, and which transmit high-frequency power sources 5A and 5B to the discharge chamber 2 to thereby generate the plasma; a substrate transfer device 44 which sends a substrate S before plasma treatment to a predetermined position of the ridge electrodes 21a and 21b, and sends out the substrate S after the plasma treatment from the predetermined position of the ridge electrodes 21a and 21b; the high-frequency power sources 5A and 5B which supply high-frequency power; and gas discharge means which discharges gas between the ridge electrodes 21a and 21b and the substrate S. A dimension in the width direction (direction H) of the ridge electrodes 21a and 21b are set to be larger than a dimension in the lengthwise direction (direction L). A transfer direction C of the substrate S is made to extend along the width direction H of the ridge electrodes 21a and 21b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
