| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve read out characteristic of pixels and inhibit dark current by optimization of a pattern of an element isolation region and an angle of impurity injection, and by controlling an ion implantation amount depending on an implantation position. <P>SOLUTION: Impurity concentration of an impurity layer having polarity the reverse of that of a light receiving part 2 is changed depending on an element isolation region around the light receiving part 2, an element isolation region of a read out region of a charge transfer transistor 3 and an element isolation region around a floating region 4 functioning as a charge voltage conversion part. Ion implantation directions are adjusted such that four ion implantation directions (indicated by arrows (1)-(4) in FIG. 1) each inclined at a predetermined angle (here 45 degrees) with respect to an X axis direction and a Y axis direction, lie at right angles to each other so as to increase impurity concentration of the element isolation region around the light receiving part 2, and to decrease impurity concentration of the element isolation region in an active layer of the read out region of the charge transfer transistor 3, for example. <P>COPYRIGHT: (C)2012,JPO&INPIT |
