| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a MPS structure or a JBS structure, capable of maintaining both of low forward drop voltage VF and high reverse breakdown voltage VR, and having short reverse recovery time trr and low reverse leakage current IR. <P>SOLUTION: A semiconductor device 100 comprises: an n<SP POS="POST">-</SP>type semiconductor layer 114; p<SP POS="POST">+</SP>type diffusion regions 120 that are selectively formed on the surface of the n<SP POS="POST">-</SP>type semiconductor layer 114; an electrode layer composed of a barrier metal layer 130 that is formed on the surface of the n<SP POS="POST">-</SP>type semiconductor layer 114 and the p<SP POS="POST">+</SP>type diffusion regions 120, forms a Schottky junction with the n<SP POS="POST">-</SP>type semiconductor layer 114, and forms an ohmic junction with the p<SP POS="POST">+</SP>type diffusion regions 120; and local lifetime-control regions 160 in which lifetime killers are introduced into only the regions directly under the p<SP POS="POST">+</SP>type diffusion regions 120. <P>COPYRIGHT: (C)2012,JPO&INPIT |
