| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device, in which an end face of a cavity is prevented from oxidizing, and which has high reliability. <P>SOLUTION: A nitride semiconductor device comprises a separation layer 115 composed of aluminum nitride between an end face coating film 116 and an end face 113 of a cavity. The separation layer 115 contains aluminum oxynitride on the end face coating film 116 side. The end face coating film 116 is an oxide. <P>COPYRIGHT: (C)2012,JPO&INPIT |
