发明名称 |
VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A DOPED THIN FILM LAYER ON A SUBSTRATE |
摘要 |
An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.
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申请公布号 |
US2012052617(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US20100973093 |
申请日期 |
2010.12.20 |
申请人 |
JOHNSON JAMES NEIL;ZHAO YU;FELDMAN-PEABODY SCOTT DANIEL;GENERAL ELECTRIC COMPANY |
发明人 |
JOHNSON JAMES NEIL;ZHAO YU;FELDMAN-PEABODY SCOTT DANIEL |
分类号 |
H01L31/18;C23C16/06 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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