发明名称 VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A DOPED THIN FILM LAYER ON A SUBSTRATE
摘要 An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.
申请公布号 US2012052617(A1) 申请公布日期 2012.03.01
申请号 US20100973093 申请日期 2010.12.20
申请人 JOHNSON JAMES NEIL;ZHAO YU;FELDMAN-PEABODY SCOTT DANIEL;GENERAL ELECTRIC COMPANY 发明人 JOHNSON JAMES NEIL;ZHAO YU;FELDMAN-PEABODY SCOTT DANIEL
分类号 H01L31/18;C23C16/06 主分类号 H01L31/18
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