发明名称 |
SYSTEM AND METHOD FOR DETECTING DISTURBED MEMORY CELLS OF A SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A method of detecting a disturb condition of a memory cell includes application of multiple sets of conditions to the memory cell and determining whether the memory cell behaves as a programmed memory cell in response to the sets of conditions. A disturbed memory cell can be detected if the memory cell responds as a programmed memory cell in response to one of the sets of conditions, but responds as an erased memory cell in response to another of the sets of conditions. |
申请公布号 |
US2012051130(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US20100868228 |
申请日期 |
2010.08.25 |
申请人 |
HUNG CHUN-HSIUNG;LIN JENG-KUAN;CHANG KUEN-LONG;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUNG CHUN-HSIUNG;LIN JENG-KUAN;CHANG KUEN-LONG |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|