| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate attached with a cubic silicon carbide film having the cubic silicon carbide film which is scarce in crystal defects and high quality on a silicon substrate having a lattice constant different from that of the cubic silicon carbide. <P>SOLUTION: The substrate 1 attached with a cubic silicon carbide film includes the cubic silicon carbide film 3 formed on the surface 2a of the silicon substrate 2, and many quadrangular pyramid-like vacancies 4 gradually contracting inward from the surface 2a of the silicon substrate 2 formed in the vicinity of the interface between the silicon substrate 2 and the cubic silicon carbide film 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
